Теперь перейдем к части уникальных возможностей этого монстра!Сперва, вот несколько сводных таблиц по повышению Vcore
http://hem.bredband.net/b240074/v_dfi.jpg Вот точный вольтаж, показываемый CpuZ 1.50v 1.225 x 123% 1.440v (cpuz)
1.51v 1.375 x 110% 1.456v (cpuz)
1.52v 1.350 x 113% 1.472v (cpuz)
1.53v 1.125 x 136% 1.472v (cpuz)
1.54v 1.400 x 110% 1.488v (cpuz)
1.55v 1.375 x 113% 1.504v (cpuz)
1.56v 1.175 x 113% 1.504v (cpuz)
1.57v 1.525 x 104% 1.520v (cpuz)
1.58v 1.400 x 113% 1.536v (cpuz)
1.59v 1.450 x 110% 1.536v (cpuz)
1.60v 1.275 x 126% 1.552v (cpuz)
1.61v 1.425 x 113% 1.552v (cpuz)
1.62v 1.475 x 110% 1.568v (cpuz)
1.63v 1.200 x 136% 1.568v (cpuz)
1.64v 1.450 x 113% 1.584v (cpuz)
1.65v 1.500 x 110% 1.600v (cpuz)
1.66v 1.350 x 123% 1.600v (cpuz)
1.67v 1.325 x 126% 1.616v (cpuz)
1.68v 1.525 x 110% 1.632v (cpuz)
1.69v 1.375 x 123% 1.632v (cpuz)
1.70v 1.250 x 136% 1.648v (cpuz)
1.71v 1.550 x 110% 1.648v (cpuz)
Теперь о том как добиться большей стабильности vdimm на этой чудо материнке!
Думаю на картинке все видно, довольно наглядно :) Простой процедурой вы можете сдвинуть массив перемычек vdimm на 1 ярус вниз и еще одной перемычкой замкнуть два верхних контакта (красная перемычка на рисунке), доп. перемычки есть в комплекте ;) В любом случае, данная модификация стабилизирует напряжение!
(С) - i4memory.com Samsung TCCD 290mhz 2.5-4-3-7 8-18-3223 at 2.64v
VID = 1.4v
VID Special = AUTO
chipset = 1.6v
LDT = 1.3v
LDT 3x
CPC = Enabled
CAS Latency(CL) = 2.5
RAS to CAS(Trcd) = 4
Min RAS# Active time(Tras) = 7
Row Precharge Time(Trp) = 3
Row Cycle Time(Trc) = 8
Row Refresh Cycle Time(Trfc) = 18
Row to Row Delay(Trrd) = 3
Write Recovery Time(Twr) = 2
Write to Read Delay(Twtr) = 2
Read to Write Delay(Trwt) = 3
Refresh Period (Tref) = 4708
Write CAS Latency(Twcl) = 1
DRAM Bank Interleave = Enabled
Skew = AUTO
Skew Value = 0
DRAM Drive Strength = Level 8
DRAM Data Drive Strength = AUTO
Max Async Latency = AUTO
DDRAM Response Time = Normal
Read Preamble Time = AUTO
Idle Cycle Limit = 256
Dynamic Counter = Disabled
R/W Queue Bypass = 16x
Bypass Max = 7x
32 byte Granularity = Disable(4burst)
Patriot PC3200LLK 245mhz 2.5-3-2-5 7-18-2222 at 2.69v
VID = 1.45v
VID Special = AUTO
chipset = 1.6v
LDT = 1.3v
LDT 4x
CPC = Enabled
CAS Latency(CL) = 2.5
RAS to CAS(Trcd) = 3
Min RAS# Active time(Tras) = 5
Row Precharge Time(Trp) = 2
Row Cycle Time(Trc) = 7
Row Refresh Cycle Time(Trfc) = 18
Row to Row Delay(Trrd) = 2
Write Recovery Time(Twr) = 2
Write to Read Delay(Twtr) = 2
Read to Write Delay(Trwt) = 2
Refresh Period (Tref) = 4708
DRAM Bank Interleave = Enabled
Skew = AUTO
Skew Value = 0
DRAM Drive Strength = AUTO
DRAM Data Drive Strength = AUTO
Max Async Latency = 7ns
DDRAM Response Time = Fast
Read Preamble Time = 5.5ns
Idle Cycle Limit = 256
Dynamic Counter = Disabled
R/W Queue Bypass = AUTO
Bypass Max = AUTO
32 byte Granularity = Disable(4burst)
2x 512MB OCZ PC3200 Gold UTT BH-5 dual channel kit @10x 255mhz 2-2-2-5 7-14-2-2-1-2 at 3.35-3.40v
chipset = 1.6v
LDT = 1.5v
LDT 4x
CPC = Enabled
CAS Latency(CL) = 2
RAS to CAS(Trcd) = 2
Min RAS# Active time(Tras) = 5
Row Precharge Time(Trp) = 2
Row Cycle Time(Trc) = 7
Row Refresh Cycle Time(Trfc) = 14
Row to Row Delay(Trrd) = 2
Write Recovery Time(Twr) = 2
Write to Read Delay(Twtr) = 1
Read to Write Delay(Trwt) = 2
Refresh Period (Tref) = 3120
Write CAS Latency(Twcl) = Auto
DRAM Bank Interleave = Enabled
Skew = AUTO
Skew Value = 0
DRAM Drive Strength = Level 3
DRAM Data Drive Strength = Level 1
Max Async Latency = 7ns
Read Preamble Time = 5ns
Idle Cycle Limit = 256 or 16
Dynamic Counter = Enabled
R/W Queue Bypass = 16x or 8x
Bypass Max = 7x
32 byte Granularity = Disable(8burst)
